Copper Plating Metallized Aluminum Nitride AlN Ceramic Substrate

Metallized Al2O3 Ceramics Substrate Ni/Au Plating
Aluminium nitride ceramic washer ring
Metallized Aluminum Nitride AlN Ceramic Substrate
Metallized Aluminum Nitride AlN Ceramic Substrate
Metallized Aluminum Nitride AlN Ceramic Substrate
Metallized Aluminum Nitride AlN Ceramic Substrate

Copper Plating Metallized Aluminum Nitride AlN Ceramic Substrate

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Copper Plating Metallized Aluminum Nitride AlN Ceramic Substrate

Copper Plating Metallized Aluminum Nitride AlN Ceramic Substrate

Aluminum nitride ceramics have excellent electrical and thermal properties, and are considered to be the most promising high thermal conductivity ceramic substrate materials. In order to seal the package structure, mount components and connect input and output terminals, the surface and interior of the aluminum nitride ceramic substrate need to be metallized. The reliability and performance of ceramic surface metallization have an important impact on the application of ceramic substrates, and firm bonding strength and excellent air tightness are the most basic requirements. Considering the heat dissipation of the substrate, it is also required to have high thermal conductivity at the interface between the metal and the ceramic. The metallization methods on the surface of aluminum nitride ceramics include: thin film method, thick film method, high melting point metallization method, electroless plating method, direct copper cladding method (DBC), etc.

DBC ceramic substrate/for electronic heating devices/Copper Plating Metallized Aluminum Nitride AlN Ceramic Substrate /FUBOON

DBC(Direct Bonded Copper)tenique denotes a special process in which the copper foil and the al2o3 or AlN (one or both sides) are directly bonded under appropriate high temperature. The finished super-thin DBC substrate has excellent electrical isolation,high thermal conductivity, fine solderability and high bonding strength.It may be structured just lick PCB to get etched wiring and has high curreng loading capability .Therefore DBC ceramic substrates have become the base material of tuture for both the construction and the interconnection techniques of high power semiconductor electronic circuits and also have been the basis for “chip on boaed”technology which repre-sents the packaging trend in century.
Metallized Aluminum Nitride
DBC Features
1.High mechanical strength,mechanically stable shape;high strength,fine thermal conductivity,excellent electrical isolation;good adhesion,corrosion resistant;
2.Much better thermal cycling capabilities (up to 50000 cycles),high reliability;
3.May be structured just like PCB boards or IMS substrates to get etched wiring;
4.No contamination,environmentally clean;
5.Wide application temperature:-55℃ ~ 850℃; The thermal expansion coefficient is closed to that of silicon, so production technologies of power module are greatly simplified.

Copper Plating Metallized Aluminum Nitride AlN Ceramic Substrate

Aluminium Nitride Material Properties
Properties
FUB-AN180
FUB-AN200
FUB-AN220
Color
Gray
Gray
Beige
Main Content
96%ALN
96%ALN
97%ALN
Main Characteristics
High Thermal Conductivity,Excellent Plasma Resistance
Main Applications
Heat Dissipating Parts,Plasma Resistance Parts
Bulk Density
3.30
3.30
3.28
Water Absorption
0.00
0.00
0.00
Vickers Hardness(Load 500g)
10.00
9.50
9.00
Flexural Strength
>=350
>=325
>=280
Compressive Strength
2,500.00
2,500.00
–
Young’ Modulus of Elasticity
320.00
320.00
320.00
Poisson’s Ratio
0.24
0.24
0.24
Fracture Toughness
–
–
–
Coefficient Linear Thermal Expansion
40-400 degree Celsius
4.80
4.60
4.50
Thermal Conductivity
20 degree Celsius
180.00
200.00
220.00
Specific Heat
0.74
0.74
0.76
Thermal Shocking Resistance
–
–
–
Volume Resistivity
20 degree Celsius
>=10-14
>=10-14
>=10-13
Dielectric Strength
>=15
>=15
>=15
Dielectric Constant
1MHz
9.00
8.80
8.60
Loss Tangent
*10-4
5.00
5.00
6.00
Remark: The value is just for review, different using conditions will have a little difference.

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