



AlN Aluminum Nitride Ceramic Metallized DPC Substrate with Au/Cu Coating
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Aluminum Nitride Ceramic Metallized DPC Substrate with Au/Cu Coating
Aluminum Nitride Ceramic Metallized DPC Substrate
Mainly by evaporation, magnetron sputtering and other surface deposition process to carry on the substrate surface metallization, first under the condition of vacuum sputtering, titanium, and then is copper particles, the plating thickness, then finish making line with ordinary PCB craft, and then to plating/electroless deposition way to increase the thickness of the line, the preparation of DPC way contains vacuum coating, wet deposition,Exposure development, etching and other processes.
Aluminum Nitride Ceramic Metallized DPC Substrate
Aluminium Nitride Material Properties | ||||
Properties | FUB-AN180 | FUB-AN200 | FUB-AN220 | |
Color | Gray | Gray | Beige | |
Main Content | 96%ALN | 96%ALN | 97%ALN | |
Main Characteristics | High Thermal Conductivity,Excellent Plasma Resistance | |||
Main Applications | Heat Dissipating Parts,Plasma Resistance Parts | |||
Bulk Density | 3.30 | 3.30 | 3.28 | |
Water Absorption | 0.00 | 0.00 | 0.00 | |
Vickers Hardness(Load 500g) | 10.00 | 9.50 | 9.00 | |
Flexural Strength | >=350 | >=325 | >=280 | |
Compressive Strength | 2,500.00 | 2,500.00 | – | |
Young’ Modulus of Elasticity | 320.00 | 320.00 | 320.00 | |
Poisson’s Ratio | 0.24 | 0.24 | 0.24 | |
Fracture Toughness | – | – | – | |
Coefficient Linear Thermal Expansion | 40-400 degree Celsius | 4.80 | 4.60 | 4.50 |
Thermal Conductivity | 20 degree Celsius | 180.00 | 200.00 | 220.00 |
Specific Heat | 0.74 | 0.74 | 0.76 | |
Thermal Shocking Resistance | – | – | – | |
Volume Resistivity | 20 degree Celsius | >=10-14 | >=10-14 | >=10-13 |
Dielectric Strength | >=15 | >=15 | >=15 | |
Dielectric Constant | 1MHz | 9.00 | 8.80 | 8.60 |
Loss Tangent | *10-4 | 5.00 | 5.00 | 6.00 |
Remark: The value is just for review, different using conditions will have a little difference. |
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