High Thermal Conductivity Aluminum Nitride Ceramic substrate

The Aluminum nitride ceramic wafer has a high thermal conductivity of more than 170W/m. K, high resistivity, low dielectric loss, good insulation, and some other excellent properties. The ALN substrate is the best choice for a wide range of industrial insulating heat sink material of high power machinery and equipment such as high-frequency equipment substrate, high power transistor module substrate, high-density hybrid circuits, microwave power devices, power semiconductor devices, power electronic devices, optoelectronic components, laser-semi-conductor, LED, IC products, and so on.

AlN substrate can be the best solution in electronics applications where strict conditions are required, such as power modules (MOSFET, IGBT), LED packages for cooling and protecting circuits, packages, and modules.

High Thermal Conductivity Aluminum Nitride Ceramic substrate

The specification of ceramic wafers and substrate
 

The main features of AlN ceramic wafers and substrate
1. High thermal conductivity (170 ~220) W/m.k,  it’s 5~8.5 times higher than that of alumina
2. Similar coefficient of thermal expansion to that of silicon (Si), it helps to achieve high reliability of Si chip
3. High insulation resistance and voltage resistance strength, but low dielectric constant and dielectric loss
4. High mechanical strength, it’s up to 450MPa and very dense ceramic body free of porosity
5. It offers very high purity up to 99%, also it’s free of toxicity and meets RoHS, REACH regulation