Hot-pressing Aluminum Nitride heater Cover Plate

Hot-pressing Aluminum Nitride heater Cover Plate

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Hot-pressing Aluminum Nitride heater Cover Plate

Hot-pressing Aluminum Nitride heater Cover Plate with thinnest thickness 0.75mm.

1.The material is very difficult to machine due to the high hardness and brittle, so it is very easily to have chips or scratches when handling or machining which lead to very high rejection rate.

2.Hot pressing aluminum nitride ceramics are sintered by vacuum hot pressing, the sintering process is more difficult than pressureless sintering. The aluminum nitride purity is up to 99.5%(without any sintering additives), and density after hot pressing reaches 3.3g/cm3, it also has excellent thermal conductivity and high electrical insulation. The thermal conductivity can be from 90 W/(m·k) to 210 W/(m·k).

3.The thinnest thickness only 0.75mm which is also difficult to machine.

The application of the Hot-pressing Aluminum Nitride heater Cover Plate:
-Cover plate heater for semiconductor
– Cover plates and MRI equipment(Magnetic Resonance Imaging)
-High-power detectors, plasma generators, military radios
-Electrostatic chucks and heating plates for semiconductors and integrated circuits
– Infrared and microwave window material

Material Features

1.Uniform microstructure

2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives

3.High electrical resistivity

4.Thermal expansion coefficient close to that of Silicon

5.Resistance to corrosion and erosion

6.Excellent thermal shock resistance

7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation

occurs around 780°C; the surface layer protects the bulk up to 1380°C).

Typical Specification:

Density:>3.3 g/cm3
Compress Strength:>3,350MPa
Bending Strength:380MPa
Thermal Conductivity:>90W/(m·K)
Coefficient of Thermal Expansion:5.0 x 10-6/K
Max. Temp:1,800°C
Volume Resistivity:7×1012 Ω·cm
Dielectric Strength:15 kV/mm
Aluminum Nitride (AlN) is an excellent material to use if high thermal conductivity and electrical insulation properties are required; making it an ideal material for use in thermal management and electrical applications. Additionally, AlN is a common alternative to Beryllium Oxide (BeO) in the semiconductor industry as it is not a health hazard when machined. Aluminum Nitride has a coefficient of thermal expansion and electrical insulation properties that closely matches that of Silicon wafer material, making it an useful material for electronics applications where high temperatures and heat dissipation is often a problem.
Aluminum Nitride is one of the few materials that offers electrical insulation and high thermal conductivity. This makes AlN extremely useful in high power electronic applications in heat sink and heat spreader applications.

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