– High Thermal Conductivity Substrates for LED & Power Electronics
– Substrates for Power Electronics
Alumina nitride ceramic substrate
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Alumina nitride ceramic substrate
Aluminum Nitride (AlN) is an excellent material to use if high thermal conductivity and electrical insulation properties are required; making it an ideal material for use in thermal management and electrical applications. Additionally, AlN is a common alternative to Beryllium Oxide (BeO) in the semiconductor industry as it is not a health hazard when machined. Aluminum Nitride has a coefficient of thermal expansion and electrical insulation properties that closely matches that of Silicon wafer material, making it an useful material for electronics applications where high temperatures and heat dissipation is often a problem.
Aluminum Nitride is one of the few materials that offers electrical insulation and high thermal conductivity. This makes AlN extremely useful in high power electronic applications in heat sink and heat spreader applications.
Property | Unit | Alumina Nitride Ceramic |
color | grey | |
Mechanical Properties | ||
Density | g/cm3 | 3.31 |
Compressive Strength | MPa | 2100 |
Flexural Strength | MPa | 335 |
Vickers Hardness | GPa | 11 |
Thermal Properties | ||
Maximum Temperature | ||
Oxidizing | °C | 700 |
Inert | °C | 1300 |
Thermal Conductivity | 30 | |
@ 25°C | W/mK | 180 |
@ 300°C | W/mK | 130 |
Coefficient of Expansion | ||
CTE 25°C – 100°C | 10^-6/°C | 3.6 |
CTE 25°C – 300°C | 10^-6/°C | 4.6 |
CTE 25°C – 500°C | 10^-6/°C | 5.2 |
CTE 25°C – 1000°C | 10^-6/°C | 5.6 |
Specific Heat | 100°C | 750 |
Thermal Shock Resistance ΔT | °C | 400 |
Electrical Properties | ||
Dielectric Constant | 1 MHz | 8.6 |
Dielectric Strength | kV/mm | >15 |
Loss Tangent | 1 MHz | 5×10^-4 |
Application
– RF / Microwave Components
– Power Modulus
– Power Transformers
– High Power LED Package
– Laser Diode Sub-mounts
– LED Chip Sub-mount
– Microelectronic Packages
– Transistors
– High Thermal Conductivity Substrates for LED & Power Electronics
– Substrates for Power Electronics
Product Features
1.Uniform microstructure
2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives
3.High electrical resistivity
4.Thermal expansion coefficient close to that of Silicon
5.Resistance to corrosion and erosion
6.Excellent thermal shock resistance
7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation
occurs around 780°C; the surface layer protects the bulk up to 1380°C).
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