Alumina nitride ceramic substrate

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alumina nitride ceramic substrate
alumina nitride ceramic substrate 3

Alumina nitride ceramic substrate

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Alumina nitride ceramic substrate

Aluminum Nitride (AlN) is an excellent material to use if high thermal conductivity and electrical insulation properties are required; making it an ideal material for use in thermal management and electrical applications. Additionally, AlN is a common alternative to Beryllium Oxide (BeO) in the semiconductor industry as it is not a health hazard when machined. Aluminum Nitride has a coefficient of thermal expansion and electrical insulation properties that closely matches that of Silicon wafer material, making it an useful material for electronics applications where high temperatures and heat dissipation is often a problem.
Aluminum Nitride is one of the few materials that offers electrical insulation and high thermal conductivity. This makes AlN extremely useful in high power electronic applications in heat sink and heat spreader applications.
Property
Unit
Alumina Nitride Ceramic
color
grey
Mechanical Properties
Density
g/cm3
3.31
Compressive Strength
MPa
2100
Flexural Strength
MPa
335
Vickers Hardness
GPa
11
Thermal Properties
Maximum Temperature
Oxidizing
°C
700
Inert
°C
1300
Thermal Conductivity
30
@ 25°C
W/mK
180
@ 300°C
W/mK
130
Coefficient of Expansion
CTE 25°C – 100°C
10^-6/°C
3.6
CTE 25°C – 300°C
10^-6/°C
4.6
CTE 25°C – 500°C
10^-6/°C
5.2
CTE 25°C – 1000°C
10^-6/°C
5.6
Specific Heat
100°C
750
Thermal Shock Resistance ΔT
°C
400
Electrical Properties
Dielectric Constant
1 MHz
8.6
Dielectric Strength
kV/mm
>15
Loss Tangent
1 MHz
5×10^-4

Application

– RF / Microwave Components

– Power Modulus
– Power Transformers
– High Power LED Package

– Laser Diode Sub-mounts

– LED Chip Sub-mount
– Microelectronic Packages
– Transistors

– High Thermal Conductivity Substrates for LED & Power Electronics

– Substrates for Power Electronics

– High Thermal Conductivity Substrates for LED & Power Electronics

– Substrates for Power Electronics

Product Features

1.Uniform microstructure


2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives


3.High electrical resistivity


4.Thermal expansion coefficient close to that of Silicon


5.Resistance to corrosion and erosion


6.Excellent thermal shock resistance


7.Chemically stable up to 980°C in H2 and CO2 atmospheres, and in air up to 1380°C (surface oxidation

occurs around 780°C; the surface layer protects the bulk up to 1380°C).

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