Black Aluminum Nitride Ceramic Wafer

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Hot Pressed Black Aluminum Nitride Ceramic Wafer

Aluminum Nitride (AlN) is an excellent material to use if high thermal conductivity and electrical insulation properties are required; making it an ideal material for use in thermal management and electrical applications. Additionally, AlN is a common alternative to Beryllium Oxide (BeO) in the semiconductor industry as it is not a health hazard when machined. Aluminum Nitride has a coefficient of thermal expansion and electrical insulation properties that closely matches that of Silicon wafer material, making it an useful material for electronics applications where high temperatures and heat dissipation is often a problem.
Aluminum Nitride is one of the few materials that offers electrical insulation and high thermal conductivity. This makes AlN extremely useful in high power electronic applications in heat sink and heat spreader applications.

Hot pressed alumiunm nitride is used in applications requiring high electrical resistivity in additional to exceptional thermal conductivity.The application for hot pressed AlN typically involve rigorous or abrasive environments and high-tempreature thermal cycling.

–Semiconductor Heaters –Etching Machine

Below is the properties of the pressed alumina nitride.
Flexural Strength, MOR (20 °C)
Fracture Toughness
MPa m1/2
Thermal Conductivity (20 °C)
W/m K
Coefficient of Thermal Expansion
1 x 10-6/°C
Maximum Use Temperature
Dielectric Strength (6.35mm)
Dielectric Loss
1MHz, 25 °C
1 x 10-4 to 5 x 10-4
Volume Resistivity (25°C)
1013 to 1014


– RF / Microwave Components

– Power Modulus
– Power Transformers
– High Power LED Package

– Laser Diode Sub-mounts

– LED Chip Sub-mount
– Microelectronic Packages
– Transistors

– High Thermal Conductivity Substrates for LED & Power Electronics

– Substrates for Power Electronics

– High Thermal Conductivity Substrates for LED & Power Electronics

– Substrates for Power Electronics

Product Features

1.Uniform microstructure

2.High thermal conductivity* (70-180 Wm-1K-1), tailored via processing conditions and additives

3.High electrical resistivity

4.Thermal expansion coefficient close to that of Silicon

5.Resistance to corrosion and erosion

6.Excellent thermal shock resistance

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