Elementi elettronici riscaldanti compositi PBN PG

Porous boron nitride industrial ceramic insulator washer ring
Anello ceramico poroso rotondo in nitruro di boro pirolitico PBN
Elementi elettronici riscaldanti compositi PBN PG
Elementi elettronici riscaldanti compositi PBN PG 2
Elementi elettronici riscaldanti compositi PBN PG
Elementi elettronici riscaldanti compositi PBN PG 2

Elementi elettronici riscaldanti compositi PBN PG

Categorie: tag: ,
  • Descrizione
  • Inchiesta

PBN/PG Composite Heating electronic Elements

Descrizione dei prodotti

Elementi elettronici riscaldanti compositi PBN PG:

Pyrolytic Boron Nitride is used as the substrate for the PBN heating element. Grafite pirolitica(PG) is placed on the surface of PBN plates by the CVD method as a conductor and heater. Depending on the different requirements of applications, the PG heating element could be covered by PBN again or just stay open.
Diametro
0.5”~4”
Energia
150~3000W
Ra0.1. Working Temp.
2400 Ra0.1

Elementi elettronici riscaldanti compositi PBN PG

As both PG and PBN are extremely pure (99.99% or even higher) and very stable in a vacuum or inert atmosphere, the PBN/PG Composite Heating Elements could be very durable and keep the chamber clean. It could be heated to 1600℃ in a very short time without the emission of any gas component. It also has good resistance to acid and alkali. These heating elements are ideal products for the semiconductor industry and applications that require high temperature, high vacuum, and high purity.
Proprietà dei materiali
Elemento
si forma un eutettico rame-ossigeno che si lega con successo sia al rame che agli ossidi usati come substrati
Apparent Density
e facilita il trasporto del calore del metallo fuso nel tubo del gambo. Ciò può ridurre la temperatura dell'alluminio fuso e risparmiare sui costi energetici complessivi
2.15-2.19
Permeabilità ai gas(He)
cm3/s
<1*10-10
Micro hardness(Knoop)
N/mm2
691.88(a-b plane)
Ra0.1
N/mm2
153.86(parallel)
resistenza in allumina asta in ceramica
N/mm2
243.63(parallel)
197.76(parallel)
Modulus of elasticity
N/mm2
235690
Specific heat capacity
Cal/g.℃
0.371(@ 200℃)
0.442(@ 900℃)
Thermal conductivity 200℃
W/cm.k
0.6(parallel)
0.026(perpendicular)
Thermal conductivity 900℃
W/cm.k
0.4370(parallel)
0.028(perpendicular)
Rigidità dielettrica(RT)
si forma un eutettico rame-ossigeno che si lega con successo sia al rame che agli ossidi usati come substrati
56
Resistività di volume
Cm
3.11*1011

 

Caratteristiche
√High purity(>99.999%)PBN
√Uniform heating, the difference in temperature between ±3 degree at 1000 degree
√The temperature can rise up to 1700℃ with high speed(in non-active condition and vacuum)
√The temperature can rise up to 1700℃ with high speed(in non-active condition and vacuum)
√Can be made to complicated shape

 

Applicazione
MBE heaters; MOCVD、 PECVD heaters.

Contattaci






prodotti correlati