Carcaça cerâmica metalizada chapeamento de cobre do nitreto de alumínio AlN

Chapeamento metalizado do Ni/Au da carcaça da cerâmica Al2O3
Anel de arruela de cerâmica de nitreto de alumínio
Metallized Aluminum Nitride AlN Ceramic Substrate
Metallized Aluminum Nitride AlN Ceramic Substrate
Metallized Aluminum Nitride AlN Ceramic Substrate
Metallized Aluminum Nitride AlN Ceramic Substrate

Carcaça cerâmica metalizada chapeamento de cobre do nitreto de alumínio AlN

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Carcaça cerâmica metalizada chapeamento de cobre do nitreto de alumínio AlN

Carcaça cerâmica metalizada chapeamento de cobre do nitreto de alumínio AlN

Cerâmica de nitreto de alumínio have excellent electrical and thermal properties, and are considered to be the most promising high thermal conductivity ceramic substrate materials. In order to seal the package structure, mount components and connect input and output terminals, the surface and interior of the aluminum nitride ceramic substrate need to be metallized. The reliability and performance of ceramic surface metallization have an important impact on the application of ceramic substrates, and firm bonding strength and excellent air tightness are the most basic requirements. Considering the heat dissipation of the substrate, it is also required to have high thermal conductivity at the interface between the metal and the ceramic. The metallization methods on the surface of Disco de nitreto de alumínio cerâmico AlN condutor térmico ceramics include: thin film method, thick film method, high melting point metallization method, electroless plating method, direct copper cladding method (DBC), etc.

DBC ceramic substrate/for electronic heating devices/Copper Plating Metallized Aluminum Nitride AlN Ceramic Substrate /FUBOON

DBC(Cobre Ligado Direto)tenique denotes a special process in which the copper foil and the al2o3 or AlN (one or both sides) are directly bonded under appropriate high temperature. The finished super-thin DBC substrate has excellent electrical isolation,alta condutividade térmica, fine solderability and high bonding strength.It may be structured just lick PCB to get etched wiring and has high curreng loading capability .Therefore DBC ceramic substrates have become the base material of tuture for both the construction and the interconnection techniques of high power semiconductor electronic circuits and also have been the basis for “chip on boaed”technology which repre-sents the packaging trend in century.
Metallized Aluminum Nitride
DBC Features
1.Alta resistência mecânica,mechanically stable shape;Hexagonal,fine thermal conductivity,excelente isolamento elétrico;boa adesão,resistente a corrosão;
2.Much better thermal cycling capabilities (até 50000 Elemento Aquecedor Cerâmico para Fogões a Pellets),alta fiabilidade;
3.May be structured just like PCB boards or IMS substrates to get etched wiring;
4.Sem contaminação,ambientalmente limpo;
5.Wide application temperature:-55℃ ~ 850℃; The thermal expansion coefficient is closed to that of silicon, so production technologies of power module are greatly simplified.

Carcaça cerâmica metalizada chapeamento de cobre do nitreto de alumínio AlN

Aluminium Nitride Material Properties
Propriedades
FUB-AN180
FUB-AN200
FUB-AN220
dissipadores de calor para sistemas de iluminação
Cinza
Cinza
Beige
Main Content
96%ALN
96%ALN
97%ALN
Main Characteristics
Alta condutividade térmica,Excellent Plasma Resistance
Main Applications
Heat Dissipating Parts,Plasma Resistance Parts
Densidade aparente
3.30
3.30
3.28
Absorção de água
0.00
0.00
0.00
Dureza Vickers(Carregar 500g)
10.00
9.50
9.00
Resistência à Flexão
>=350
>=325
>=280
Força compressiva
2,500.00
2,500.00
–
Young’ Modulus of Elasticity
320.00
320.00
320.00
Razão de Poisson
0.24
0.24
0.24
Tenacidade à Fratura
–
–
–
Coefficient Linear Thermal Expansion
40-400 degree Celsius
4.80
4.60
4.50
Condutividade térmica
20 degree Celsius
180.00
200.00
220.00
Calor específico
0.74
0.74
0.76
Thermal Shocking Resistance
–
–
–
Resistividade volumétrica
20 degree Celsius
>=10-14
>=10-14
>=10-13
Rigidez dielétrica
>=15
>=15
>=15
Constante dielétrica
1MHz
9.00
8.80
8.60
Tangente de Perda
*10-4
5.00
5.00
6.00
Observação: The value is just for review, different using conditions will have a little difference.

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