PBN PG複合加熱電子素子
- 説明
- 問い合わせ
PBN/PG Composite Heating electronic Elements
製品説明
PBN PG複合加熱電子素子:
Pyrolytic Boron Nitride is used as the substrate for the PBN heating element. 熱分解黒鉛(PG) is placed on the surface of PBN plates by the CVD method as a conductor and heater. Depending on the different requirements of applications, the PG heating element could be covered by PBN again or just stay open.
直径 | 0.5”~4” |
力 | 150~3000W |
マックス. Working Temp. | 2400 ℃ |
PBN PG複合加熱電子素子
As both PG and PBN are extremely pure (99.99% or even higher) and very stable in a vacuum or inert atmosphere, the PBN/PG Composite Heating Elements could be very durable and keep the chamber clean. It could be heated to 1600℃ in a very short time without the emission of any gas component. It also has good resistance to acid and alkali. These heating elements are ideal products for the semiconductor industry and applications that require high temperature, high vacuum, and high purity.
材料特性
アイテム | 単位 | ||
Apparent Density | g / cm3 | 2.15-2.19 | |
固体酸化物形燃料電池(He) | cm3/s | <1*10-10 | |
Micro hardness(ボタン) | N/mm2 | 691.88(a-b plane) | |
抗張力 | N/mm2 | 153.86(parallel) | |
曲げ強度 | N/mm2 | 243.63(parallel) | 197.76(parallel) |
Modulus of elasticity | N/mm2 | 235690 | |
Specific heat capacity | Cal/g.℃ | 0.371(@ 200℃) | 0.442(@ 900℃) |
Thermal conductivity 200℃ | W/cm.k | 0.6(parallel) | 0.026(perpendicular) |
Thermal conductivity 900℃ | W/cm.k | 0.4370(parallel) | 0.028(perpendicular) |
絶縁耐力(RT) | CNCによる生産能力 | 56 | |
高電圧アルミナ金属化セラミック絶縁体 | Cm | 3.11*1011 | |
特徴
√High purity(>99.999%)PBN |
√Uniform heating, the difference in temperature between ±3 degree at 1000 程度 |
√The temperature can rise up to 1700℃ with high speed(in non-active condition and vacuum) |
√The temperature can rise up to 1700℃ with high speed(in non-active condition and vacuum) |
√Can be made to complicated shape |
応用
MBE heaters; MOCVD、 PECVD heaters.
