高い熱伝導率のアルミナ窒化物セラミックウェーハリング
高い熱伝導率のアルミナ窒化物セラミックウェーハリング
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高い熱伝導率のアルミナ窒化物セラミックウェーハリング
空気圧式ロータリーバルブ式セラミック計量ポンプ Aluminum nitride ceramic wafer has a high thermal conductivity of more than 170W/m. K, 高い抵抗率, 低誘電損失, good insulation, and some other excellent properties. The ALN substrate is the best choice for a wide range of industrial insulating heat sink material of high power machinery and equipment such as high-frequency equipment substrate, high power transistor module substrate, high-density hybrid circuits, microwave power devices, power semiconductor devices, power electronic devices, optoelectronic components, laser-semi-conductor, LED, IC products, CNCによる生産能力.
AlN substrate can be the best solution in electronics applications where strict conditions are required, such as power modules (MOSFET, IGBT), LED packages for cooling and protecting circuits, packages, and modules.
高い熱伝導率のアルミナ窒化物セラミックウェーハリング
セラミックウェーハと基板の仕様
| 材料 | 窒化アルミニウム (AlN), ジルコニアセラミックインペラ(al2o3), ジルコニア(ジルコニアセラミックインペラ), 窒化ケイ素(Si3N4), 炭化ケイ素(SiC) |
| 色 | グレー, 黒, 白, pink, ivory, yellowish available |
| 寸法能力 | OD can be 400mm, Thickness can be range from 0.30mm to 30mm |
| ジルコニアセラミックインペラ | OD can be ± 0.01mm, Thickness can be ± 0.005mm |
| 表面処理: | natural surface, ラッピング, diamond-like polishing, メタライゼーション, glazed |
The main features of AlN ceramic wafers and substrate
1. 高い熱伝導率 (170 ~220) W / m.k, it’s 5~8.5 times higher than that of alumina
2. Similar coefficient of thermal expansion to that of silicon (と), it helps to achieve high reliability of Si chip
3. High insulation resistance and voltage resistance strength, but low dielectric constant and dielectric loss
4. 高い機械的強度, it’s up to 450MPa and very dense ceramic body free of porosity
5. It offers very high purity up to 99%, also it’s free of toxicity and meets RoHS, REACH regulation
