ركيزة سيراميك نيتريد الألومنيوم عالية التوصيل الحراري

ال Aluminum nitride ceramic wafer has a high thermal conductivity of more than 170W/m. ك, high resistivity, فقدان عازل منخفض, good insulation, and some other excellent properties. The ALN substrate is the best choice for a wide range of industrial insulating heat sink material of high power machinery and equipment such as high-frequency equipment substrate, high power transistor module substrate, high-density hybrid circuits, microwave power devices, power semiconductor devices, power electronic devices, optoelectronic components, laser-semi-conductor, LED, IC products, وهلم جرا.

AlN substrate can be the best solution in electronics applications where strict conditions are required, such as power modules (MOSFET, IGBT), LED packages for cooling and protecting circuits, packages, and modules.

ركيزة سيراميك نيتريد الألومنيوم عالية التوصيل الحراري

مواصفات الرقائق الخزفية والركيزة

The main features of AlN ceramic wafers and substrate
1. الموصلية الحرارية العالية (170 ~220) ث / عضو الكنيست, it’s 5~8.5 times higher than that of alumina
2. Similar coefficient of thermal expansion to that of silicon (و), it helps to achieve high reliability of Si chip
3. High insulation resistance and voltage resistance strength, but low dielectric constant and dielectric loss
4. قوة ميكانيكية عالية, it’s up to 450MPa and very dense ceramic body free of porosity
5. It offers very high purity up to 99%, also it’s free of toxicity and meets RoHS, REACH regulation